DocumentCode
3697268
Title
Heavy Ion SEU Test Data for 32nm SOI Flip-Flops
Author
R. C. Quinn;J. S. Kauppila;T. D. Loveless;J. A. Maharrey;J. D. Rowe;M. W. McCurdy;E. X. Zhang;M. L. Alles;B. L. Bhuva;R. A. Reed;W. T. Holman;M. Bounasser;K. Lilja;L. W. Massengill
Author_Institution
Vanderbilt Univ., Nashville, TN, USA
fYear
2015
fDate
7/1/2015 12:00:00 AM
Firstpage
1
Lastpage
5
Abstract
Two 32nm SOI single-event upset test chips have been irradiated at LBNL and TAMU heavy ion test facilities. The test chips include unhardened and RHBD designs such as DICE, LEAP DICE, and stacking devices. SEU cross-section data are presented for the hardened and unhardened flip-flop designs across test facility, beam tune, angle of incidence, and clock frequency.
Keywords
"Flip-flops","Clocks","Radiation effects","Testing","Single event upsets","Logic gates","Radiation hardening (electronics)"
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop (REDW), 2015 IEEE
Print_ISBN
978-1-4673-7641-9
Type
conf
DOI
10.1109/REDW.2015.7336712
Filename
7336712
Link To Document