• DocumentCode
    3697269
  • Title

    Heavy Ion Single Event Effects Measurements of 512Mb ISSI SDRAM

  • Author

    Farokh Irom;Mehran Amrbar

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Heavy ion single-event measurements on 512Mb ISSI synchronous dynamic random-access memory (SDRAM) are reported. Heavy ion susceptibility to single event latchup (SEL), single bit upsets (SBUs), double bit upsets (DBUs), multiple bit upset (MBUs) and single effect functional interrupts (SEFIs) were investigated.
  • Keywords
    "SDRAM","Radiation effects","Performance evaluation","Protons","Ion beams","Temperature measurement"
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2015 IEEE
  • Print_ISBN
    978-1-4673-7641-9
  • Type

    conf

  • DOI
    10.1109/REDW.2015.7336713
  • Filename
    7336713
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3697269