• DocumentCode
    3697273
  • Title

    Heavy-Ion Induced SETs in 32nm SOI Inverter Chains

  • Author

    Jeffrey A. Maharrey;Jeffrey S. Kauppila;Rachel C. Quinn;T. Daniel Loveless;En Xia Zhang;W. Timothy Holman;Bharat L. Bhuva;Lloyd W. Massengill

  • Author_Institution
    Vanderbilt Univ., Nashville, TN, USA
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    A comprehensive data set of heavy-ion induced single-event transients has been collected for inverter chains fabricated in the IBM 32nm partially-depleted silicon-on-insulator technology across various bias voltages, transistor variants, ion energies and angles of incidence.
  • Keywords
    "Inverters","MOS devices","Threshold voltage","Pulse measurements","Silicon-on-insulator","Transient analysis","Performance evaluation"
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2015 IEEE
  • Print_ISBN
    978-1-4673-7641-9
  • Type

    conf

  • DOI
    10.1109/REDW.2015.7336717
  • Filename
    7336717
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3697273