• DocumentCode
    3697276
  • Title

    Leakage Current Degradation of Gallium Nitride Transistors Due to Heavy Ion Tests

  • Author

    Brian D. Olson;J. David Ingalls;Casey H. Rice;Casey C. Hedge;Patrick L. Cole;Adam R. Duncan;Sarah E. Armstrong

  • Author_Institution
    Crane Div., Naval Surface Warfare Center, Crane, IN, USA
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    Commercial gallium nitride high-electron mobility transistors are tested at Texas A&M University cyclotron. Degradation of gate and drain currents is characterized.
  • Keywords
    "Logic gates","Radiation effects","Gallium nitride","Leakage currents","Current measurement","HEMTs","MODFETs"
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2015 IEEE
  • Print_ISBN
    978-1-4673-7641-9
  • Type

    conf

  • DOI
    10.1109/REDW.2015.7336720
  • Filename
    7336720
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3697276