• DocumentCode
    3697280
  • Title

    Predicting Optocoupler Life with Radiation Damage in Various Circuits

  • Author

    J. Brelski;D. M. Hiemstra

  • Author_Institution
    MDA, Brampton, ON, Canada
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    The effectiveness of using generic proton displacement damage test results to predict the radiation degradation of optocouplers across different circuit applications is presented. Test results are provided for the 4N49 from three lots and compared to a simple model. Estimating the life of circuits using this model is discussed.
  • Keywords
    "Light emitting diodes","Resistors","Degradation","Phototransistors","Extraterrestrial measurements","Current measurement","Integrated circuit modeling"
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2015 IEEE
  • Print_ISBN
    978-1-4673-7641-9
  • Type

    conf

  • DOI
    10.1109/REDW.2015.7336724
  • Filename
    7336724
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3697280