• DocumentCode
    3697288
  • Title

    SEE Tests of the NAND Flash Radiation Tolerant Intelligent Memory Stack

  • Author

    M. Bagatin;S. Gerardin;A. Paccagnella;C. Sellier;P. X. Wang;V. Ferlet-Cavrios;C. Poivey

  • Author_Institution
    Dipt. di Ing. dell´Inf., Univ. di Padova, Padua, Italy
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    The NAND Flash Radiation-Tolerant Intelligent Memory Stack (RTIMS FLASH) was developed to allow designers of space applications to take advantage of the large density offered by Commercial-Off-The-Shelf NAND Flash, without having to deal with radiation-induced upsets and high-current events. It can be configured in three operating modes, offering different trade-offs in terms of upset protection vs memory size. The effectiveness of the RTIMS Flash was tested during two test campaigns at the Heavy Ion Facility, in Louvain-la-Neuve, Belgium.
  • Keywords
    "Flash memories","Application specific integrated circuits","Radiation effects","Registers","Tunneling magnetoresistance","Ions","Performance evaluation"
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2015 IEEE
  • Print_ISBN
    978-1-4673-7641-9
  • Type

    conf

  • DOI
    10.1109/REDW.2015.7336732
  • Filename
    7336732
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3697288