• DocumentCode
    3697390
  • Title

    Research of high performance GeSn/Ge heterostructure photodiodes

  • Author

    Hui Cong;Chunlai Xue;Buwen Cheng;Chuanbo Li;Qiming Wang

  • Author_Institution
    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Bejing, P R China
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Surface-illuminated GeSn/Ge p-i-n photodiodes with Ge0.943Sn0.057 active layer on p+-Ge substrate were fabricated. A quite high rectification ratio of 3 × 104 at ±1V was obtained with a diameter of 30nm. The device shows a low dark current density of 176.3mA/cm2 at a reverse bias of −1V.
  • Keywords
    "Optical device fabrication","Optical films","Dark current","PIN photodiodes","Substrates","Metals"
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronics Global Conference (OGC), 2015
  • Print_ISBN
    978-1-4673-7731-7
  • Type

    conf

  • DOI
    10.1109/OGC.2015.7336867
  • Filename
    7336867
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3697390