• DocumentCode
    3699899
  • Title

    A 105-GHz, supply-scaled distributed amplifier in 90-nm SiGe BiCMOS

  • Author

    Kelvin Fang;Cooper Levy;James F. Buckwalter

  • Author_Institution
    Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093
  • fYear
    2015
  • Firstpage
    182
  • Lastpage
    185
  • Abstract
    Distributed amplifiers (DAs) feature large bandwidth but relatively low gain and power efficiency. We present a supply-scaling technique to enhance the efficiency of a broadband DA. The presented eight-stage amplifier has a gain of 12 dB over a 3 dB bandwidth from 14-105 GHz and achieves peak output power of 17 dBm at 12.6% power-added efficiency (PAE) at 50 GHz. The DA is designed in a 90-nm SiGe BiCMOS process and occupies an area of 2.65 mm × 0.57 mm. Total dc power consumed is 297 mW.
  • Keywords
    "Power amplifiers","Bandwidth","Gain","Silicon germanium","BiCMOS integrated circuits","Capacitance","Power generation"
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/BCTM.2015.7340559
  • Filename
    7340559
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3699899