• DocumentCode
    3699916
  • Title

    Optimizing the vertical profile of SiGe HBTs to mitigate radiation-induced upsets

  • Author

    Zachary E. Fleetwood;Brian R. Wier;Uppili S. Raghunathan;Nelson E. Lourenco;Michael A. Oakley;Alvin J. Joseph;John D. Cressler

  • Author_Institution
    School of Electrical and Computer Eng., 777 Atlantic Drive, NW, Georgia Tech, Atlanta, GA 30332-0250 USA
  • fYear
    2015
  • Firstpage
    72
  • Lastpage
    75
  • Abstract
    Profile optimization techniques are investigated for silicon-germanium heterojunction bipolar transistors (SiGe HBTs) intended for inverse-mode (IM) operation. IM device operation, also known as inverse active, involves electrically swapping the emitter and collector terminals and has been shown to improve the radiation tolerance of SiGe HBTs to single event transients (SETs). Multiple profile design variations are explored and trade-offs are analyzed with support of TCAD simulation. Modest design variations show marked improvement on IM performance while having minor impact on forward-mode (normal active) operation.
  • Keywords
    "Doping","Silicon germanium","Frequency modulation","Heterojunction bipolar transistors","Germanium","Performance evaluation","Junctions"
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/BCTM.2015.7340576
  • Filename
    7340576
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3699916