Characterization of residual stress levels in complementary bipolar junction transistors on (100) silicon

Residual levels of stress remaining after device fabrication have been characterized in the base and emitter regions of shallow-trench-isolated complementary npn and pnp transistors on (100) silicon utilizing uniaxial stress measurements. A residual biaxial stress of approximately 160 MPa has been found in the active regions of the npn transistors, whereas negligible residual stress is observed in the corresponding pnp transistors.