• DocumentCode
    3704562
  • Title

    Design of W-band high-isolation T/R switch

  • Author

    Chien-Chang Chou;Shih-Chiao Huang;Wen-Chian Lai;H.-C. Kuo;Huey-Ru Chuang

  • Author_Institution
    Institute of Computer and Communication Engineering, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C.
  • fYear
    2015
  • Firstpage
    1084
  • Lastpage
    1087
  • Abstract
    This paper presents a W-band CMOS SPDT high isolation T/R switch fabricated in 90nm CMOS. The switch is designed by using series-shunt structure with body-floating technique to improve the insertion loss and linearity. To achieve high-isolation performance, the parallel inductor and leakage cancellation technique are adopted. The measurement results show that the designed switch has a good performance in the return loss, insertion loss and isolation in W-band 75-110GHz frequency band. Compared with reported works, the designed switch has the best isolation performance of 48 dB at 94-GHz.
  • Keywords
    "Insertion loss","Switching circuits","CMOS integrated circuits","Transistors","Switches","Loss measurement","Inductors"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2015 European
  • Type

    conf

  • DOI
    10.1109/EuMC.2015.7345956
  • Filename
    7345956
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3704562