DocumentCode
3704613
Title
Frequency-agile packaged GaN-HEMT using MIM thickfilm BST varactors
Author
Sebastian Preis;Alex Wiens;Nikolai Wolff;Rolf Jakoby;Wolfgang Heinrich;Olof Bengtsson
Author_Institution
Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchoff-Strasse 4, 12489 Berlin, Germany
fYear
2015
Firstpage
1291
Lastpage
1294
Abstract
Nowadays wireless communication systems demand flexibility along with electrical efficiency. In this work the highly efficient GaN-HEMT technology is combined with electrically tunable Barium-Strontium-Titanate MIM varactors in parallel-plate configuration, resulting in a frequency-agile transistor module. An efficiency improvement of 19% within a tuning voltage range of 400 V was measured. Maximum CW rating is 44.4 dBm output power at 71.8% drain efficiency. Thermal cycling and modulated-signal measurements verified highly stable and linear operation.
Keywords
"Varactors","Tuning","Transistors","Radio frequency","Impedance","Temperature measurement","Linearity"
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2015 European
Type
conf
DOI
10.1109/EuMC.2015.7346007
Filename
7346007
Link To Document