• DocumentCode
    3706294
  • Title

    Kinetic model for scavenging of SiO2 interface layer in HfO2 gate stacks

  • Author

    Xiuyan Li;Takeaki Yajima;Tomonori Nishimura;Kosuke Nagashio;Akira Toriumi

  • Author_Institution
    Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This work discusses effects of the substrate on the scavenging of SiO2 interface layer (SiO2-IL) in HfO2 gate stacks. We propose a model that SiO2-IL scavenging occurs through the reaction of the oxygen vacancy (VO) transferred from HfO2 to SiO2 with oxygen formed at SiO2/substrate interface.
  • Keywords
    "Hafnium compounds","Silicon","Substrates","Logic gates","Kinetic theory","Silicon carbide","Oxidation"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348532
  • Filename
    7348532
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706294