• DocumentCode
    3706306
  • Title

    Performance prospect of graphene barristor with high on-off ratio (∼107)

  • Author

    Jinwoo Noh;Kyoung Eun Chang;Chang Hoo Shim;Soyoung Kim;Byoung Hun Lee

  • Author_Institution
    Center for Emerging Electric Devices and Systems, School of Material Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, Korea, 500-712
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The graphene barristor is a promising device enabling high on-off ratio switching over 105 using a graphene FET. In this work, a semi-empirical device model for the graphene barristor has been developed using the physical parameters extracted from the graphene barristors fabricated on a lightly doped silicon substrate. Then, the ultimate performance limit and benefits of barristors were explored by varying the device parameters. The barristor showed a promising performance, but the scalability requires a creative solution for the device structure to maximize the current injection area.
  • Keywords
    "Graphene","Logic gates","Silicon","Performance evaluation","Modulation","Capacitance","Substrates"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348544
  • Filename
    7348544
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706306