DocumentCode
3706310
Title
FDSOI to nanowires and single electron transistors
Author
M. Vinet;S. Barraud;X. Jehl;R. Lavieville;V. Deshpande;R. Wacquez;M. Sanquer;R. Coquand;O. Cueto;B. Roche;B. Voisin;M. Pierre;L. Grenouillet;B. Previtali;P. Perreau;T. Poiroux;O. Faynot
Author_Institution
CEA-Leti, MINATEC Campus and CEA-INAC, 17 rue des Martyrs, 38054 Grenoble, France
fYear
2014
fDate
6/1/2014 12:00:00 AM
Firstpage
1
Lastpage
2
Abstract
This paper reviews how the evolution of FDSOI planar architecture towards Trigate Nanowires leads to a natural Single Electron Transistor and Field Effect Transistor convergence at room temperature. On one hand, this convergence sets up technological specifications to preserve CMOS operation. On the other hand it opens the path to room temperature hybrid circuits based on single electron transistors and MOSFETs. Further on, single electron effects can be downscaled to the ultimate single atom transistors and we demonstrate the practical performance of electron pumps for metrologic applications.
Keywords
"Logic gates","Nanowires","Field effect transistors","Single electron transistors","Electrostatics","CMOS integrated circuits"
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN
978-1-4799-5676-0
Type
conf
DOI
10.1109/SNW.2014.7348548
Filename
7348548
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