• DocumentCode
    3706334
  • Title

    Electron transport in double-donor systems at Si/SiO2 Interface in SOI-FETs

  • Author

    Arup Samanta;Daniel Moraru;Takeshi Mizuno;Michiharu Tabe

  • Author_Institution
    Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this report, we will show the manipulation of donor electronic wave function by applying an electric field across an ultrathin Si channel. Most importantly, we find a sudden change in the transport path in the interface well due to merging of two donor-induced quantum wells formed at the Si/SiO2 interface. This finding represents an important step toward the control of electron transport in double-donor systems.
  • Keywords
    "Electric fields","Wave functions","Merging","Silicon","Quantum dots","Transistors","Quantum computing"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348571
  • Filename
    7348571
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706334