• DocumentCode
    3706336
  • Title

    Perpendicular magnetic field dependence of triangular triple silicon quantum dot system

  • Author

    R. Mizokuchi;T. Kodera;K. Horibe;S. Oda

  • Author_Institution
    Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo, Japan
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have fabricated a triangular triple quantum dot system with 3 leads, which is made on a silicon-on-insulator wafer by dry etching and integrated with a single electron transistor as charge sensor. We have successfully monitored the charge transitions of each dot by charge sensor. We have observed charge degeneracy point and investigated a dependence of the point on perpendicular magnetic field.
  • Keywords
    "Voltage measurement","Quantum dots","Magnetic fields","Current measurement","Magnetic field measurement","Silicon","Temperature measurement"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348573
  • Filename
    7348573
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706336