Study of quantized-energy effects in Si nanoscale lateral pn junction diodes

In this work, we study SOI nanoscale pn junctions and find that transport characteristics are strongly affected by states of individual dopants and by quantized energy states. For pn diodes with lower doping concentration, we find that individual dopant atoms work as electron traps, inducing RTS in the diode current. On the other hand, for highly-doped pn diodes, quantization effects play critical roles in transport characteristics for both forward and reverse bias regimes.