Degradation-aware reference control and offset compensation for ReRAM

We propose the degradation-aware reference control and offset compensation based on the intermittent diagnosis of resistance distributions and variations of ReRAM cells. In the determination of the read reference current, the abnormal tail bits are excluded considering the recovery capability of ECC. As a result, the read cycling disturbance is improved by 100 times. The offset compensation of the sensing comparator improved the sensing margin and consequent read latency. The input offset of comparator is effectively compensated and sensing margin is improved by 100 mV.