Small signal impedance analysis of high efficient power devices

The semiconductors impedance is a primary electrical parameter that determines the performance of electronic devices and circuits. For this reason many papers [1,] [2], [3] discus the frequency-dependent impedance of semiconductor junctions. Subject of this contribution is the investigation of physical model of the diode and bipolar power semiconductor devices (silicon) in the low frequency range between 0-100kHz. The goal of this contribution is to demonstrate through experimental measurements that the impedance of the power semiconductors depends on the signal frequency, junction´s geometry and properties of the electronic structure. In the paper a procedure for computing the equivalent semiconductor impedance has been described and by experiments validated.