• DocumentCode
    3710905
  • Title

    VOC enhancement of sub-micron CIGS solar cells by sulfization of the Mo surface

  • Author

    Kihwan Kim;Peipei Xin; Jaeho Yun;William N. Shafarman

  • Author_Institution
    Institute of Energy Conversion, University of Delaware, Newark, 19716, USA
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this work, a Mo/MoS2 back contact was investigated for sub-micron-thick Cu(In,Ga)Se2 (CIGS) solar cells. With a H2S reaction, 10 and 30 nm-thick MoS2 films were formed on the Mo back contact prior to CIGS film growth with co-evaporation. The MoS2 layers did not significantly affect the microstructure of CIGS films. However, the MoS2 layer was improved the VOC of CIGS cells by ~ 50 mV. This is attributed to reduced recombination occurring at the CIGS/Mo interface.
  • Keywords
    "Photovoltaic systems","Passivation","Delamination","Patents","Yttrium"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7355621
  • Filename
    7355621
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3710905