• DocumentCode
    3710939
  • Title

    960mV open circuit voltage chalcopyrite solar cell

  • Author

    Homare Hiroi;Yasuaki Iwata;Kyouhei Horiguchi;Shunsuke Adachi;Noriyuki Sakai;Hiroki Sugimoto

  • Author_Institution
    Technology Development Division, Atsugi Research Center, Solar Frontier K.K., 123-1 Shimokawairi, Kanagawa 243-0206, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Open circuit voltage of 960mV on chalcopyrite solar cell was achieved by pure-sulfide CuInGaS2 solar cell. Generally, high performance CuInGaS2 needs KCN-etching treatment to remove CuS layer, however, we could fabricate it without KCN-etching treatment. Additionally, Cd-free buffer layer was applied for current density improvement and the champion cell demonstrated over 14% efficiency. In this paper, the latest results for high performance pure-sulfide CuInGaS2 cells will be presented.
  • Keywords
    "Indexes","Europe"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7355655
  • Filename
    7355655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3710939