• DocumentCode
    3711073
  • Title

    Performance analysis of Cu(In,Ga)(Se,S)2 thin film solar cells

  • Author

    Tetiana Lavrenko;Kerstin Marzinzig;Thomas Walter

  • Author_Institution
    University of Applied Sciences Ulm, Albert - Einstein - Allee 55, 89081, Germany
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    The impact of sulfur incorporation and its content in the Cu(In,Ga)(Se,S)2 layer with respect to a bandgap widening and an improvement of absorber quality has been investigated. A theoretical method to quantitatively estimate the minority carrier lifetimes based on experimental temperature dependent Voc measurements is presented. The often observed discrepancy between lifetime measurements on the bare Cu(In,Ga)(Se,S)2 films and completed devices is discussed.
  • Keywords
    "Sulfur","Charge carrier lifetime","Temperature measurement","Photonic band gap","Radiative recombination","Photovoltaic cells"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7355789
  • Filename
    7355789