DocumentCode
3711073
Title
Performance analysis of Cu(In,Ga)(Se,S)2 thin film solar cells
Author
Tetiana Lavrenko;Kerstin Marzinzig;Thomas Walter
Author_Institution
University of Applied Sciences Ulm, Albert - Einstein - Allee 55, 89081, Germany
fYear
2015
fDate
6/1/2015 12:00:00 AM
Firstpage
1
Lastpage
5
Abstract
The impact of sulfur incorporation and its content in the Cu(In,Ga)(Se,S)2 layer with respect to a bandgap widening and an improvement of absorber quality has been investigated. A theoretical method to quantitatively estimate the minority carrier lifetimes based on experimental temperature dependent Voc measurements is presented. The often observed discrepancy between lifetime measurements on the bare Cu(In,Ga)(Se,S)2 films and completed devices is discussed.
Keywords
"Sulfur","Charge carrier lifetime","Temperature measurement","Photonic band gap","Radiative recombination","Photovoltaic cells"
Publisher
ieee
Conference_Titel
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type
conf
DOI
10.1109/PVSC.2015.7355789
Filename
7355789
Link To Document