• DocumentCode
    3711492
  • Title

    Characterization of structure and growth evolution for nc-Si:H in the tandem photovoltaic device configuration

  • Author

    Zhiquan Huang;Lila R. Dahal;Maxwell M. Junda;Puruswottam Aryal;Sylvain Marsillac;Robert W. Collins;Nikolas J. Podraza

  • Author_Institution
    Wright Center for Photovoltaics Innovation and Commercialization & Department of Physics and Astronomy, University of Toledo, OH, 43606, USA
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Spectroscopic ellipsometry (SE) is used to study growth evolution of bottom cell p-type doped and intrinsic hydrogenated silicon (Si:H) layers in p-i-n amorphous/nanocrystalline (a-Si:H/nc-Si:H) tandem photovoltaic (PV) devices. From SE data collected in situ during Si:H growth, crystallite coalescence transitions are identified as well as variations in optical response, in the form of the complex dielectric function (ε = ε1 + iε2), also consistent with transitions from mixed (a+nc) to single phase nc-Si:H during growth. A growth evolution diagram for the i-layer in the tandem PV device configuration is constructed. Device properties are related to p- and i-layer structure.
  • Keywords
    "Photovoltaic systems","Junctions","Plasmas","Surface treatment","Photovoltaic cells","Rough surfaces"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356214
  • Filename
    7356214
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711492