• DocumentCode
    3711510
  • Title

    Thin film III?V photovoltaics using single-cry stalline-like, flexible substrates

  • Author

    M. Rathi;P. Dutta;Y. Yao;Y. Gao;M. Asadirad;N. Zheng;P. Ahrenkiel;J. Ryou;V. Selvamanickam

  • Author_Institution
    Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, 77059, USA
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    High quality, epitaxial undoped, Zn- and Se-doped GaAs films have been grown by metal organic chemical vapor deposition (MOCVD) on flexible metal substrates using buffered Ge epitaxial templates. The GaAs films exhibit strong (400) orientation, sharp in-plane texture, strong photoluminescence and a defect density of ~107 cm-2. Furthermore, the GaAs films exhibit hole and electron mobilities as high as 106 and 872 cm2/V-s respectively. Also, roll-to-roll MOCVD growth of epitaxial GaAs films has been demonstrated for the first time on flexible metal substrates. These high mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates are being developed for high efficiency, low cost thin film III-V solar photovoltaics (PV).
  • Keywords
    "Substrates","Epitaxial growth","Gallium arsenide","Metals","MOCVD","Manufacturing"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356232
  • Filename
    7356232
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711510