• DocumentCode
    3711520
  • Title

    Zinc oxide and silicon based heterojunction solar cell model

  • Author

    Babar Hussain;Abasifreke Ebong;Ian Ferguson

  • Author_Institution
    Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, USA
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We propose a ZnO/Si single heterojunction solar cell model based on PC1D simulations and preliminary experimental support. The front ZnO film is intended to perform as antireflection coating as well as electrically active layer in pn junction formation. Considering importance of optical properties of ZnO as front n-layer, experiments are performed to find optimized growth window for ZnO using MOCVD. Absorption spectrum of ~100 nm thick ZnO film grown in our lab was used in the PC1D simulations in order to get more realistic results. Simulations projected conversion efficiency around 19% and fill factor more than 80% which are very promising.
  • Keywords
    "Zinc oxide","II-VI semiconductor materials","Photovoltaic cells","Silicon","Temperature measurement","Films","Coatings"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356242
  • Filename
    7356242