Modified Silicon nanotips with improved carrier lifetime by using solution process for efficient solar cells applications

In this work, a simple solution process (metal-assisted wet chemical etching [MacEtch] method) is used to fabricate high-density silicon nanohole (SiNH) arrays on n-type wafer. SiNH arrays generally produce a large surface-area-to-volume ratio, so that aid for strong light trapping effect between the nanostructures causes high absorption and charge collection via the formation of a core-sheath p-n junction. However, the photogenerated excited carriers are easily trapped by high-density surface defects due to higher surface area prolonging to depth of nanohole (NH). To reduce the surface defects and metal contamination of SiNHs formed by metal-catalyst etching, it is important to further proceed to feasible simple solution treatment. Applying the chemical polishing etching (CPE) treatment to SiNH surface leads to smooth and contamination-free surface. In addition, all the processes mentioned here are energy and cost-efficient.