Examination of different adder structures concerning di/dt in a 180nm technology

In the presented paper we examine and compare different adder structures for their EMC behavior. On the one hand the analysis is carried out for different topologies as Ripple Carry Adder and Kogge Stone Adder. And on the other hand these topologies are realized in different logic styles as standard CMOS, complementary pass transistor logic, buffered NMOS pass transistor and complementary buffered NMOS pass transistor logic. All these variations are compared over di/dt, power consumption, speed / performance and transistor count. Additionally a new topology for the Kogge Stone Adder is introduced.