Characterization of single and composites thin films memristive device

In this paper, three different sets of samples were prepared to compare the memristive behavior of single layer metal oxide which is zinc oxide (ZnO) as well as two composite ZnO and TiO₂ double layer thin film samples. Spin coating method was selected to deposit ZnO and TiO₂ solutions on indium tin oxide (ITO)/Glass substrate. Platinum (Pt) was used as the top metal electrode which had been deposited on metal oxide layer using sputtering method. Memristive behavior determined by the current-voltage (I-V) characterization had been measured using two-point probe I-V measurement. From the I-V characteristics, it can be seen that pinched hysteresis loop were seen for all samples yet hysteresis loop with composite layer gave a wider loop compared to the single one. Thus, it can be observed that composite layer affects the behavior of memristive device.