• DocumentCode
    3718527
  • Title

    Dose Effects in CMOS Operational Amplifiers with Bipolar and CMOS Input Stage at Different Dose Rates and Temperatures

  • Author

    Konstantin I. Tapero;Aleksandr S. Petrov;Pavel A. Chubunov;Victor N. Ulimov;Vasily S. Anashin

  • Author_Institution
    Res. Inst. of Sci. Instrum., Lytkarino, Russia
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The degradation of CMOS operational amplifiers with bipolar and CMOS input stage under the irradiation at different dose rates and temperatures is investigated. It is shown that such circuits can be susceptible to both enhanced low dose rate sensitivity and time-dependent effects that should be taken into account during radiation testing.
  • Keywords
    "Radiation effects","Degradation","CMOS integrated circuits","Annealing","Operational amplifiers","Temperature sensors","Temperature measurement"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365602
  • Filename
    7365602
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718527