DocumentCode
3718562
Title
Multiple Cell Upset Mechanisms in SRAMs
Author
Alexander I. Chumakov;Armen V. Sogoyan;Anna B. Boruzdina;Anatoly A. Smolin;Alexander A. Pechenkin
Author_Institution
Specialized Electron. Syst., Moscow, Russia
fYear
2015
Firstpage
1
Lastpage
5
Abstract
New experimental results using both ion and laser facilities are presented to analyse four multiple cell upset (MCU) mechanisms in SRAMs. Equations describing basic MCU mechanisms were provided.
Keywords
"Scattering","Random access memory","Radiation effects","Integrated circuits","Junctions","Boundary conditions","Writing"
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN
978-1-5090-0232-0
Type
conf
DOI
10.1109/RADECS.2015.7365638
Filename
7365638
Link To Document