On the compact modeling of double gate p-n-i-n tunneling field-effect transistors

An analytical model on the potential distribution and drain current characteristics for double gate p-n-i-n tunnel field-effect- transistor (TFET) is developed. In this model, the effect of channel inversion charge was taken into account and potential distribution was approximated by dividing the source, drain and channel regions into several parts so as to facilitate the analytical solution to the Poisson´s equation near the tunneling junction. Then generation rate and total tunneling current are obtained using the Kane´s model. This model is verified by comparing the results with TCAD simulation and good agreement is obtained.