• DocumentCode
    3724757
  • Title

    Millimeter-wave bias dependent model for GaAs pHEMT based on S-parameters

  • Author

    Milan Makwana;Sonu Sharma;Animesh Biswas;Priya Shinghal;Robin Sloan;Zhirun Hu

  • Author_Institution
    Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    330
  • Lastpage
    332
  • Abstract
    0.1 μm gate length GaAs pHEMT having gate peripheries of 2×25 μm (number of gate finger × unit gate width) is fabricated on the 2mil (50.8 μm) GaAs/AlGaAs/InGaAs substrate using PP10-10 process. This work presents a measurement based bias dependent model for a 2×25 μm GaAs pHEMT. Measurement includes pulsed I-V and on wafer scattering parameters for the frequency range of 45 MHz to 110 GHz. Comparison of measurement data and WIN foundry´s process design kit (PDK) model is presented using Advanced Design System (ADS).
  • Keywords
    "Conferences","Antennas"
  • Publisher
    ieee
  • Conference_Titel
    Antennas and Propagation (APCAP), 2015 IEEE 4th Asia-Pacific Conference on
  • Type

    conf

  • DOI
    10.1109/APCAP.2015.7374393
  • Filename
    7374393
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3724757