• DocumentCode
    3725938
  • Title

    Controlling optical properties of Ge-on-Si by thermal annealing and etching process

  • Author

    Chulwon Lee;Bugeun Ki;Yang-Seok Yoo;Min-Ho Jang;Jungwoo Oh;Yong-Hoon Cho

  • Author_Institution
    Department of Physics and KI for the NanoCentury, KAIST, Daejeon, Korea
  • Volume
    1
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We studied optical properties of thermally annealed Ge-on-Si. From Raman experiments, tensile strain as well as Si-Ge intermixing were investigated. Significant Γ-band transition peak-shift was confirmed by photoluminescence depending on the thermal annealing conditions.
  • Keywords
    "Annealing","Etching","Tensile strain","Photoluminescence","System-on-chip","Silicon"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7375929
  • Filename
    7375929
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3725938