Dopant-dependent chemical wet etching phenomena of semipolar (11–22) GaN film

Wet etching properties of semipolar (11-22) GaN films are investigated by using the different dopants, such as Si and Mg. A trigonal prism cell structure with a (0001) c-plane and the next-nearest-neighbor {10-10} m-planes is formed by KOH wet etchant. Etching rate of semipolar (11-22) Si-doped GaN film was faster than Mg-doped and undoped GaN. Regardless of dopants, the etching rate increased with etching depth.