DocumentCode
3726180
Title
Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes
Author
Min Ju Kim;Ju Hyun Park;Dong Su Jeon;Tae-Ho Lee;Tae Geun Kim
Author_Institution
School of Electrical Engineering, Korea University, Seoul 136-713, Korea
Volume
2
fYear
2015
Firstpage
1
Lastpage
2
Abstract
We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ~ 94.7% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 Ω/□ on the NUV LED wafer.
Keywords
"Indium tin oxide","Optical films","Optical device fabrication","Light emitting diodes","Metals","Resistance","Annealing"
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
Type
conf
DOI
10.1109/CLEOPR.2015.7376173
Filename
7376173
Link To Document