• DocumentCode
    3732496
  • Title

    Physical model with parameter extraction method for Fuji Electric 1.7kV IGBT

  • Author

    Shiqi Ji;Ting Lu;Zhengming Zhao;Tatsuhiko Fujihira;Seiki Igarashi

  • Author_Institution
    Department of Electrical Engineering, Tsinghua University, China
  • fYear
    2015
  • Firstpage
    587
  • Lastpage
    590
  • Abstract
    An insulated gate bipolar transistor (IGBT) physical model with field stop cell structure is presented in this paper. The extraction method for all parameters is also given here. The parameters are extracted for Fuji Electric 1.7kV/300A IGBT (2MBI300VN-170-50). The accuracy of the model is verified by experiments.
  • Keywords
    "Insulated gate bipolar transistors","Mathematical model","Integrated circuit modeling","Semiconductor device modeling","Capacitance","Transient analysis","Logic gates"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Machines and Systems (ICEMS), 2015 18th International Conference on
  • Type

    conf

  • DOI
    10.1109/ICEMS.2015.7385103
  • Filename
    7385103
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3732496