• DocumentCode
    3734575
  • Title

    Highly sensitive RF energy harvester using gate and bulk self compensation techniques

  • Author

    Hugo Gon?alves;Jorge Fernandes

  • Author_Institution
    INESC-ID / Instituto Superior T?cnico - TU Lisbon, Portugal
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    This paper presents a highly sensitive RF energy harvester. The developed prototype is based on an improved rectifier, that makes use of passive self compensation and biasing techniques to increase the sensitivity and efficiency of the device. These techniques include gate compensation and bulk DC biasing to lower the rectifier transistors threshold voltage. The rectifier exhibits a very high sensitivity of 84 mV at 1 V / 1 μW output voltage and power.
  • Keywords
    "Logic gates","Radio frequency","Sensitivity","Threshold voltage","MOSFET","Standards"
  • Publisher
    ieee
  • Conference_Titel
    Design of Circuits and Integrated Systems (DCIS), 2015 Conference on
  • Type

    conf

  • DOI
    10.1109/DCIS.2015.7388568
  • Filename
    7388568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3734575