Optimization of Indium Gallium Nitride quantum dots for absorbing light from solar spectra

Use of renewable energy is the key to produce electricity from limited resources. Solar cells appear as promising candidates for this purpose. Research on third generation quantum dot solar cells have drawn much attention. Solar cells made of wide bandgap materials that utilize quantum dots have the potentials for being ideal solar cells of future. Quantum dots have a tunable bandgap, so they can be designed to absorb light from the entire solar spectra. Proper tuning of the quantum dots in the absorber layer is the key factor for absorbing solar photons. Here we have optimized Indium Gallium Nitride quantum dots for absorbing photons from most of the solar spectra. It covers the entire range of visible light along with a significant portion from ultraviolet (UV) and Infrared (IR) light . In this theoretical approach, the bandgap of Indium Gallium Nitride and the radii of the quantum dots were varied throughout the simulation. At an optimal mole fraction of Indium & Gallium, we tuned the quantum dots to absorb wavelengths from 142 nm to 1565 nm.