• DocumentCode
    3736923
  • Title

    Study on the prospects of Sb2Te3 back surface field in ZnCdS/ZnCdTe thin film solar cell

  • Author

    Muin Uddin;M. S. Hossain;N. Amin

  • Author_Institution
    Department of Electrical & Electronic Engineering, Dhaka University of Engineering & Technology, Bangladesh
  • fYear
    2015
  • Firstpage
    403
  • Lastpage
    406
  • Abstract
    This paper numerically explores the possibility of high efficiency, ultrathin and stable ZnCdTe (CZT) polycrystalline solar cell using well accepted simulator AMPS-1D. The base line structure of the ZnCdTe cell (Glass/ITO/CdS/ZnCdTe/Back Contact) was the beginning point of this work and further this base line structure was modified to achieve ultrathin, higher efficiency and stable solar cell. In modified structure, CdS window layer has been replaced by a wide band gap material ZnxCd1-xS which increase the spectral response in the blue region as well as ZnxCd1-xS window layer was reduced to the extreme limit with insertion of a suitable buffer layer of ZnO in between ITO and window layer to check forward leakage current of ultrathin window layer. To lessen the back surface recombination loss and barrier height at back contact another extra layer (BSF p-Sb2Te3) has been inserted in between p-ZnCdTe layer and back contact (BC). Then the thickness of the window layer and absorber layer of the modified structure has been optimized. The modified structure with back surface field (BSF) layer (Glass/ ITO/ZnO/ZnxCd1-xS/ZnxCd1-xTe/Sb2Te3/BC) shows the highest efficiency of 23.17% (Jsc=33.50 mA/cm2, FF=0.77% and Voc= 0.98V). Finally the temperature effect on cell parameters was investigated and the overall temperature coefficient (TC) of the proposed cell is found to be 0.085%.
  • Publisher
    ieee
  • Conference_Titel
    Electrical Information and Communication Technology (EICT), 2015 2nd International Conference on
  • Print_ISBN
    978-1-4673-9256-3
  • Type

    conf

  • DOI
    10.1109/EICT.2015.7391985
  • Filename
    7391985