• DocumentCode
    3736938
  • Title

    Enhancement of device performance with optimized absorber layer in CIGS solar cell

  • Author

    Sharmin Aktar Chowdhury;Shah Alam

  • Author_Institution
    Department of Applied Physics, Electronics & Communication Engineering, University of Chittagong, 4331, Bangladesh
  • fYear
    2015
  • Firstpage
    475
  • Lastpage
    479
  • Abstract
    Numerical simulation of CIGS solar cell has been carried out in this study to investigate the performance of the solar cell with different band-gap and thickness of the absorber layer. In this paper, we also introduce the effect of Ga content on solar cell material parameters. The aim of this work is to check the device performance like open circuit voltage, short circuit current density, fill-factor and efficiency with the change of thickness and band-gap of the absorber layer. It is shown that, by optimizing the CIGS absorber layer it is possible to achieve an AM 1.5G conversion efficiency of greater than 22% which is an increased value than presently reported.
  • Keywords
    "Compounds","Radiative recombination","Photoconductivity","Mathematical model","Dielectrics"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Information and Communication Technology (EICT), 2015 2nd International Conference on
  • Print_ISBN
    978-1-4673-9256-3
  • Type

    conf

  • DOI
    10.1109/EICT.2015.7392000
  • Filename
    7392000