• DocumentCode
    3741150
  • Title

    High-speed oxidation-confined 850nm VCSELs

  • Author

    Yuan Feng;Pengcheng Liu;Dawei Feng;Guojun Liu;Yongqin Hao;Changling Yan;Yang Li;Jiabin Zhang;Zaijin Li;Yuan Feng;Dawei Feng

  • Author_Institution
    National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    389
  • Lastpage
    392
  • Abstract
    We report on the design, fabrication and tested of high-speed, oxidation-confined 850nm VCSELs. We also compare the use of InGaAs and GaAs quantum wells(QWs) in the active region. The simulation test was showed both VCSELs of the QWs structure. The optimized InGaAs structure VCSELs can improve high-speed performance and opto-electronic characteristics. High-speed 850nm VCSELs have been fabricated of output power reached 11mW at room temperature, beam divergence semi-angle closed to 8.5° and modulation rates was 2.5Gbit/s.
  • Keywords
    "Vertical cavity surface emitting lasers","Resonant frequency","Oxidation","Distributed Bragg reflectors","Apertures","Photonics","Reflectivity"
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronics and Microelectronics (ICOM), 2015 International Conference on
  • Type

    conf

  • DOI
    10.1109/ICoOM.2015.7398850
  • Filename
    7398850
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3741150