• DocumentCode
    3741845
  • Title

    Class-F power amplifier with 82.9% maximum PAE at 1.89GHz for LTE applications

  • Author

    Kaikai Fan; Zhiqun Cheng; Kai Wang; Guohua Liu; Hui Wang

  • Author_Institution
    Ministry of Education key Lab. of RF circuits and Systems Hangzhou Dianzi University, 310018, China
  • fYear
    2015
  • Firstpage
    658
  • Lastpage
    660
  • Abstract
    A GaN HEMT class-F power amplifier (PA) achieving a high maximum power added efficiency (PAE) is presented. The class-F PA exhibits maximum PAE of 82.9% with an output power of 39dBm at 1.89GHz. The PA shows PAE higher than 75% over 100MHz frequency range from 1.8GHz to 1.9GHz. Source-pull and load-pull techniques in large signal analysis were conducted to satisfy the optimum load resistance at fundamental frequency, second and third harmonics.
  • Keywords
    "Harmonic analysis","HEMTs","Logic gates","Lead","Impedance","Computational modeling","Microstrip"
  • Publisher
    ieee
  • Conference_Titel
    Communication Technology (ICCT), 2015 IEEE 16th International Conference on
  • Print_ISBN
    978-1-4673-7004-2
  • Type

    conf

  • DOI
    10.1109/ICCT.2015.7399922
  • Filename
    7399922
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3741845