Design and realization of E-band 4-bit phase shifter MMIC

The first reported E-band low loss phase shifter characterized by 360 degree phase shift and low variation of insertion loss by using 0.1 um gate length GaAs pHEMT process is presented. The presented 4-bit phase shifter was realized by cascading 4 1-bit phase shifter sub-circuit to implement full 360 degree phase shift. Finally, all the 4 separated 1-bit phase shifter and 4-bit phase shifter were designed, fabricated and characterized. The measurement results show the designed E-band 4-bit phase shifter achieve near 360 degree phase shift and has very low variation of insertion loss. It offers a practical potential in the future millimeter-wave 5G NLOS multi-Gbps high data rate communication.