• DocumentCode
    3745468
  • Title

    High Sensitivity Horizontal Hall Sensors in 0.35 um BCD Technology

  • Author

    Zhenyan Zhang;Fei Lyu;Shuzhuan He;Li Li;Jin Sha;Hongbing Pan;Zexia Zhang;Yifan Pan

  • Author_Institution
    Sch. of Electron. Sci. &
  • fYear
    2015
  • Firstpage
    510
  • Lastpage
    514
  • Abstract
    In this paper, we designed a group of horizontal Hall sensors in 0.35 μm BCD (bipolar/CMOS/DMOS) technology. Compared with the existing Hall devices, the design has improvement in parts such as Hall cell parameter set and layout design under BCD technology. And then the Hall chip is taped out. The results from the precise experiment of the Hall cell verify the optimization method which can be used to realize Hall sensitivity of 964 V/ (AT).
  • Keywords
    "Sensitivity","Temperature sensors","Magnetic sensors","Doping","Silicon","Temperature"
  • Publisher
    ieee
  • Conference_Titel
    Instrumentation and Measurement, Computer, Communication and Control (IMCCC), 2015 Fifth International Conference on
  • Type

    conf

  • DOI
    10.1109/IMCCC.2015.113
  • Filename
    7405892
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3745468