• DocumentCode
    3748072
  • Title

    MOVPE In1?xGaxAs high mobility channel for 3-D NAND memory

  • Author

    E. Capogreco;J. G. Lisoni;A. Arreghini;A. Subirats;B. Kunert;W. Guo;T. Maurice;C.-L. Tan;R. Degraeve;K. De Meyer;G. Van den bosch;J. Van Houdt

  • Author_Institution
    Imec, Kapeldreef 75, B3001 Leuven Belgium
  • fYear
    2015
  • Abstract
    Epitaxially grown In1-xGaxAs is integrated for the first time as replacement of polycrystalline silicon (Si) channel down to 45 nm diameter for 3-D NAND memory application. Channels with different compositions are obtained after careful surface preparation by tuning growth conditions such as: temperature, choice of precursors and flow ratio. In1-xGaxAs shows superior conduction properties than poly-Si channel: higher Ion and transconductance (gm). Potentially good memory operations are also found.
  • Keywords
    "Silicon","Epitaxial growth","Metals","Filling","Correlation","Logic gates","Indium gallium arsenide"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409616
  • Filename
    7409616
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748072