Non volatile memory evolution and revolution

For over 40 years, the evolution of Non Volatile Memories has been mostly based on the floating gate MOS transistor. We have successfully succeeded in scaling this wonderful device below 20nm but we are now approaching the limit. It is time for disruptive innovations, either integrating the same basic device in a vertical structure or moving to totally different device concepts. This paper analyzes the different alternatives in relation to their areas of application.