Effects of free-carriers on rigid band and bond descriptions in Germanium - Key to designing and modeling in Ge nano-devices

This paper discusses free carrier effects on phonon and electronic structures in Germanium (Ge) films. The gate bias-dependent Raman and photoluminescence (PL) spectroscopies have been investigated by using back-biased GeOI FETs. The experimental results indicate that both phonon and electronic structures of Ge are dependent on gate bias in FETs with a fixed doping concentration. The results provide fundamental knowledge not only on semiconductor physics but also on nano-device modeling.