Modeling of Si Schottky diodes and its application in THz imaging

In this paper, Si Schottky-barrier diodes (SBD´s) fabricated in CMOS process are shown to be suitable for THz imaging applications. We firstly present a physical-based equivalent circuit model for Si Schottky diodes fabricated by standard 130nm CMOS technology in which I-V, C-V and RF performance are covered. Secondly, the developed transmission Line (TL) model are employed to optimize T-type matching network. Finally, a 280GHz detector based on SBD was designed and simulation results show very good performance.