• DocumentCode
    3749917
  • Title

    Effects of silica abrasive size on sapphire CMP performances and their removal mechanisms

  • Author

    Yan Zhou;Guoshim Pan;Xiaolei Shi;Hua Gong;Chunli Zou;Li Xu

  • Author_Institution
    State Key Laboratory of Tribology, Tsinghua University, Beijing, China
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The effects of silica abrasive size on sapphire CMP performances have been studied. We find that MRR by 10 nm silica slurry could appear rather high, approaching to two thirds of that by 100 nm silica slurry. The removal mechanisms of sapphire using different sizes silica have been investigated using atomic force microscopy (AFM) measurements through observing the variations of atomic step morphology on the wafer surface.
  • Keywords
    "Silicon compounds","Atmospheric measurements","Particle measurements","Substrates","Atomic measurements"
  • Publisher
    ieee
  • Conference_Titel
    Planarization/CMP Technology (ICPT), 2015 International Conference on
  • Type

    conf

  • Filename
    7412015
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3749917